Semiconductor AOI SWIR Microscopic Imaging Solution

To address non-destructive observation requirements for the interiors of silicon, silicon carbide (SiC), and indium phosphide (InP) semiconductor materials in 2.5D/3D vertical packaging, wafer-level bonding, and alignment inspection, we provide professional NIR/SWIR (near-infrared/short-wave infrared) microscopic imaging solutions.

Leveraging the penetration characteristics of short-wave infrared light in certain semiconductor materials, the system enables imaging of internal structures, backside defects, and bonding-interface features that are difficult to observe under visible light.

According to the inspection object, field of view, resolution, and automation-integration requirements, the imaging lens, coaxial/backlight illumination system, and broadband objective can all be integrated as required, providing one-stop support from optical selection and solution design through laboratory feasibility verification.

Semiconductor AOI SWIR Microscopic Imaging Solution

High-Efficiency SWIR Imaging

For special imaging requirements of wafers, SiC, semiconductor packaging, and other materials, matching appropriate optical systems and SWIR cameras enhances the contrast of defects and structural features and improves inspection efficiency.

Broadband Coating Options

VIS/VNIR/SWIR coating options cover the NIR/SWIR 400–1500 nm range, meeting imaging requirements for different materials and inspection targets.

Balanced Resolution and Field of View

Magnification and NA are matched according to camera pixels, sensor size, and inspection targets. This preserves micrometer- and even sub-micrometer-level detail while optimizing inspection efficiency.

Multiple Imaging Modes

Fixed magnification, manual continuous zoom, and motorized continuous zoom are supported, allowing flexible switching between rapid localization over a large field of view and local high-resolution observation according to inspection needs.

Modular Integration for Automated Equipment

In response to semiconductor inspection equipment requirements for space, interfaces, and functional integration, we provide open, modular microscopic imaging systems.

Coaxial / Backlight and Other Illumination Options

Coaxial illumination, backlight illumination, and other specific-band illumination can be configured according to the inspection target for observing surface defects, contours, internal structures, and transmission features.

Open Modular Design

Lenses, tube lenses, cameras, light sources, and other functional modules can be combined according to project requirements. DIC, autofocus, and other functional modules can also be introduced, facilitating optical-path optimization for specific equipment.

Adapted for Automated Inspection

Customization and integration of mechanical interfaces, camera interfaces, and electronic-control functions are supported. The system can be embedded in AOI, wafer inspection, advanced packaging, and other automated equipment and work with a motion stage for large-area scanning and defect localization.

Configuration Reference

We can integrate a modular microscopic optical path according to your short-wave infrared application. Please refer to the figure below for basic configuration selection.

Wafer Alignment Inspection: Bonded Silicon Wafer Pairs

Imaging System: SWIR zoom microscopic imaging system + SWIR camera

Illumination: SWIR illumination, 1064 nm / 1350 nm / 1550 nm

Application Details

Silicon materials have good transmission characteristics at specific short-wave infrared wavelengths. Therefore, SWIR imaging can observe wafer interiors and bonding-interface features that are not visible under visible light.

In wafer bonding inspection, it can be used to observe:

Alignment Marks — Wafer bonding alignment marks
Bond / Seal Rings — Bonding regions and metal seal rings
Particles and surface defects — Particles on wafer front and back surfaces
Bubbles, voids, and microcracks — Abnormalities at bonding interfaces and inside wafers
Wafer-edge hidden cracks and dicing notches — Defect identification using SWIR transmission differences